Trade Agreement: CETA / WTO-AGP / NAFTA / FTAs with Peru / Colombia / Panama / Korea
Tendering Procedures: Generally only one firm has been invited to bid
Non-Competitive Procurement Strategy: Exclusive Rights
Comprehensive Land Claim Agreement: No
Vendor Name and Address:
AXT
4281 TECHNOLOGY DRIVE
FREMONT California
United States
94538
Nature of Requirements:
1. Advance Contract Award Notice (ACAN)
An ACAN is a public notice indicating to the supplier community that a department or agency intends to award a contract for goods, services or construction to a pre-identified supplier, thereby allowing other suppliers to signal their interest in bidding, by submitting a statement of capabilities. If no supplier submits a statement of capabilities that meets the requirements set out in the ACAN, on or before the closing date stated in the ACAN, the contracting officer may then proceed with the award to the pre-identified supplier.
2. Definition of the requirement
The Department of National Research Council of Canada (NRC) has a requirement for the supply of 3" and 4" (in accordance with the specifications detailed in Annex A) Vertical Gradient Freeze (VGF) mechanical and prime wafers. Delivery will be made to AEP NRC, 1200 Montreal Road, Ottawa, Ontario, K1A 0R6. The period of the Standing Offer will be for 2 years from date of issuance.
The requirement also includes an irrevocable option to extend the period of Standing Offer up to 1 additional one-year periods.
AXT has developed unique and highly specialized methodologies that are proprietary to AXT. The VGF single crystal growth method is proprietary and must be used for this requirement as NRC’s beta testing has been done on substrates previously purchased from AXT.
Further substrates are required for repeat business involving increased quantities. AXT is the only commercial manufacturer in the world offering VGF-grown GaAs single crystal wafers.
The VGF method is required due to the performance specifications, devices, and yields that NRC is being requested to manufacture in increased quantity and frequency (business confidential).
3. Criteria for assessment of the Statement of Capabilities (Minimum Essential Requirements)
Any interested supplier must demonstrate by way of a statement of capabilities that its Indium Phosphide (InP) wafers meet the requirements detailed in Annex A.
4. Applicability of the trade agreement(s) to the procurement
This procurement is subject to the following trade agreement(s):
o Canadian Free Trade Agreement (CFTA)
o World Trade Organization - Agreement on Government Procurement (WTO-AGP)
o North American Free Trade Agreement (NAFTA)
5. Justification for the Pre-Identified Supplier
AXT has developed unique and highly specialized methodologies that are proprietary to AXT. The Vertical Gradient Freeze (VGF) single crystal growth method is proprietary and must be used for this requirement as NRC’s beta testing has been done on substrates previously purchased from AXT.
Further substrates are required for repeat business involving increased quantities. AXT is the only commercial manufacturer in the world offering VGF-grown GaAs single crystal wafers.
The VGF method is required due to the performance specifications, devices, and yields that we are now being requested to manufacture in increased quantity and frequency (business confidential).
6. Government Contracts Regulations Exception(s)
The following exception(s) to the Government Contracts Regulations is (are) invoked for this procurement under subsection subsection 6(d) - "only one person is capable of performing the work".
7. Exclusions and/or Limited Tendering Reasons
The following exclusion(s) and/or limited tendering reasons are invoked under the:
o Canadian Free Trade Agreement (CFTA) - Article(s) 513(b)(v)
o World Trade Organization - Agreement on Government Procurement (WTO-AGP) - Article(s) XIII, 1.(b)
o North American Free Trade Agreement (NAFTA) - Article(s) 1016.2(d)
8. Period of the proposed contract or delivery date
The proposed contract is for a period of 2 years, from contract award date to 2 years later. The contract includes the option to extend the contract period by 1 additional one-year period.
9. Name and address of the pre-identified supplier
AXT
4281 TECHNOLOGY DRIVE
FREMONT, California
94538
United States
10. Suppliers' right to submit a statement of capabilities
Suppliers who consider themselves fully qualified and available to provide the goods, services or construction services described in the ACAN may submit a statement of capabilities in writing to the contact person identified in this notice on or before the closing date of this notice. The statement of capabilities must clearly demonstrate how the supplier meets the advertised requirements.
11. Closing date for a submission of a statement of capabilities
The closing date and time for accepting statements of capabilities is 17 September, 2018.
12. Inquiries and submission of statements of capabilities
Inquiries and statements of capabilities are to be directed to:
Shannon MacCuaig
11 rue laurier, PDP III, 6A2
Gatineau, Quebec K1A 0S5
Telephone: 873-469-3983
Facsimile: 819-956-3814
E-mail: s••••••••@•••••.••.ca
ANNEX A
1. 3-Inch Wafer Specifications
1.1 3", Sulfur-doped, Prime Grade InP Wafers
The following are specified for this material:
Material: VGF InP Single Crystal Wafer
Grade: Prime, Epi-Ready
Doping: Semi-conducting, N-type, S-doped
Parameter: Value & Units
Diameter: (100) 0.1 off toward ± 0.05 degrees
Orientation: (100) 0.1 off toward ± 0.05 degrees
Primary Flat: EJ (0-1-1) ± 0.02 High Precision OF degrees
Primary Flat, a Angle: 45 degrees
Primary Flat, Length: 22 ± 1 mm
Secondary Flat: EJ (0-11)
Secondary Flat, Length: 12 ± 1 mm
Carrier Concentration: ± 0.1 degrees
Primary Flat: EJ (0-1-1) ± 0.05 degrees
Primary Flat, a Angle: 45 degrees
Primary Flat, Length: 22 ± 2 mm
Secondary Flat: EJ (0-11)
Secondary Flat, Length: 12 ± 2 mm
Carrier Concentration: ± 0.05 degrees
Primary Flat: EJ (0-1-1) ± 0.05 - High Precision OF degrees
Primary Flat, a Angle: 45 degrees
Primary Flat, Length: 22 ± 1 mm
Secondary Flat: EJ (0-11)
Secondary Flat, Length: 12 ± 1 mm
Carrier Concentration: N/A /cm3
Resistivity: >/= 5E6 ohm·cm
Mobility: N/A cm2/V.S
EPD (Average): ± 0.1 degrees
Primary Flat EJ: (0-1-1) ± 0.05 degrees
Primary Flat, a Angle: 45 degrees
Primary Flat, Length: 22 ± 2 mm
Secondary Flat: EJ (0-11)
Secondary Flat, Length: 12 ± 2 mm
Carrier Concentration: N/A /cm3
Resistivity: >/= 1E6 ohm·cm
Mobility: N/A cm2/V.S
EPD (Average): N/A /cm2
Thickness: 625 ± 50 µm
TTV: ± 0.05 degrees
Primary Flat: EJ (0-1-1) ± 0.02 High Precision OF degrees
Primary Flat, a Angle: 45 degrees
Primary Flat, Length: 22 ± 1 mm
Secondary Flat: EJ (0-11)
Secondary Flat, Length: 12 ± 1 mm
Carrier Concentration: 5~10E17 /cm3
Resistivity: N/A ohm·cm
Mobility: N/A cm2/V.S
EPD (Average): ± 0.05 degrees
Primary Flat: EJ (0-1-1) ± 0.02 High Precision OF degrees
Primary Flat, a Angle: 45 degrees
Primary Flat, Length: 32.5 ± 1 mm
Secondary Flat: EJ (0-11)
Secondary Flat, Length: 18 ± 1 mm
Carrier Concentration: ± 0.1 degrees
Primary Flat: EJ (0-1-1) ± 0.05 degrees
Primary Flat, a Angle: 45 degrees
Primary Flat, Length: 32.5 ±2.5 mm
Secondary Flat: EJ (0-11)
Secondary Flat, Length 18 ± 2 mm
Carrier Concentration: ± 0.05 degrees
Primary Flat: EJ (0-1-1) ± 0.05 - High Precision OF degrees
Primary Flat, a Angle: 45 degrees
Primary Flat, Length: 32.5 ± 1 mm
Secondary Flat: EJ (0-11)
Secondary Flat, Length: 18 ± 1 mm
Carrier Concentration: N/A /cm3
Resistivity: >/= 5E6 ohm·cm
Mobility: N/A cm2/V.S
EPD (Average): ± 0.1 degrees
Primary Flat: EJ (0-1-1) ± 0.05 degrees
Primary Flat, a Angle: 45 degrees
Primary Flat, Length: 32.5 ± 2 mm
Secondary Flat: EJ (0-11)
Secondary Flat, Length: 18 ± 2 mm
Carrier Concentration: N/A /cm3
Resistivity: >/= 5E6 ohm·cm
Mobility: N/A cm2/V.S
EPD (Average): N/A /cm2
Thickness: 625 ± 50 µm
TTV: ± 0.05 degrees
Primary Flat: EJ (0-1-1) ± 0.02 High Precision OF degrees
Primary Flat, a Angle: 45 degrees
Primary Flat, Length: 32.5 ± 1 mm
Secondary Flat: EJ (0-11)
Secondary Flat, Length: 18 ± 1 mm
Carrier Concentration: 5~10E17 /cm3
Resistivity: N/A ohm·cm
Mobility: N/A cm2/V.S
EPD (Average):
